| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_98a75c9fff239084cf3c988c59841957 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-14 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02216
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D183-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02219
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D1-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B33-113
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02142
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07F7-1896
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09D1-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09D183-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B33-113
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07F7-18 |
| filingDate |
2020-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f6cbac52c0fbc5ce308f70cfed86e935
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_188defd48490e70eee1f39ee7ae27955
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5227c7ee51f1d5864e4e0d98a77915ce
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_91f13620eddcefb5aa0e5d1db72f212c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6e1b3f8227bde516389de2f984fd6ae4 |
| publicationDate |
2021-02-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2021043446-A1 |
| titleOfInvention |
Precursors and Flowable CVD Methods for Making Low-K Films to Fill Surface Features |
| abstract |
A method for depositing a silicon-containing film, the method comprising: placing a substrate comprising at least one surface feature into a flowable CVD reactor which is at a temperature of from about −20° C. to about 100° C.; increasing pressure in the reactor to at least 10 torr; and introducing into the reactor at least one silicon-containing compound having at least one acetoxy group to at least partially react the at least one silicon-containing compound to form a flowable liquid oligomer wherein the flowable liquid oligomer forms a silicon oxide coating on the substrate and at least partially fills at least a portion of the at least one surface feature. Once cured, the silicon oxide coating has a low k and excellent mechanical properties. |
| priorityDate |
2016-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |