| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d21cbff64022f95c237c0bd3ec8656ca |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2644 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2621
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2642
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2644 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 |
| filingDate |
2020-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f119b3705ada5f50740e7696e87f37e3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b8b84f76a3f1b3995eae2557300f97ad
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a479e1f2eacc76b38cdb927379a59c72
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b15f22f7b36468e63020dda80063a15b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6b8f3865181c3a97c7a53b30d7afcaff
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c6f7da6c87eb47b1946ad1bcae8da8dd |
| publicationDate |
2020-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2020400738-A1 |
| titleOfInvention |
Methods of monitoring conditions associated with aging of silicon carbide power mosfet devices in-situ, related circuits and computer program products |
| abstract |
A method of monitoring a condition of a SiC MOSFET can include (a) applying a first test gate-source voltage across a gate-source of a SiC MOSFET in-situ, the first test gate-source voltage configured to operate the SiC MOSFET in saturation mode to generate a first drain current in the SiC MOSFET, (b) applying a second test gate-source voltage across the gate-source of the SiC MOSFET in-situ, the second test gate-source voltage configured to operate the SiC MOSFET in fully-on mode to generate a second drain current in the SiC MOSFET, (c) determining a drain-source saturation resistance using the first drain current to provide an indication of a degradation of a gate oxide of the SiC MOSFET; and (d) determining a drain-source on resistance using the second drain current to provide an indication of a degradation of contact resistance of the SiC MOSFET. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114325288-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102021116772-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-116203370-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-4209791-A1 |
| priorityDate |
2019-06-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |