| abstract |
A semiconductor device includes a first semiconductor portion and a second semiconductor portion. The first semiconductor portion provides a plurality of memory components, including a first substrate layer, a plurality of first interconnect conductive layers, a plurality of first conductive vias, and a plurality of first conductive contacts. The first conductive contacts electrically connect to the first conductive vias, and the first conductive contacts in combination with the first conductive vias are formed on a top first interconnect conductive layer of the first interconnect conductive layers. The second semiconductor portion provides a control circuit, including a second substrate layer and a plurality of second interconnect conductive layers. The first and second semiconductor portions are stacked vertically with one another, so that the first conductive contacts are electrically connected to the control circuit, and the first conductive contacts in combinations with the first conductive vias form a plurality of transmission channels. |