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filingDate 2020-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2020-10-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2020328200-A1
titleOfInvention Method of Manufacturing Semiconductor Device that Uses Bonding Layer to Join Semiconductor Substrates Together
abstract Semiconductor devices are provided in which a first semiconductor device is bonded to a second semiconductor device. The bonding may occur at a gate level, a gate contact level, a first metallization layer, a middle metallization layer, or a top metallization layer of either the first semiconductor device or the second semiconductor device.
priorityDate 2017-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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