| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05H1-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3244
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-334
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32165 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32165
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32174
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3244
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05H1-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-248
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32146 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-248
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05H1-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate |
2020-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4e6967402c184e158c4a937f316a62d3 |
| publicationDate |
2020-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2020312622-A1 |
| titleOfInvention |
Plasma etching apparatus and plasma etching method |
| abstract |
A plasma etching apparatus includes a processing vessel, a stage, a gas supply, a first high frequency power supply, a second high frequency power supply and a control device. The stage is provided and configured to place thereon a substrate. The gas supply is configured to supply a processing gas. The first high frequency power supply is configured to supply a first high frequency power. The second high frequency power supply is configured to supply a second high frequency power to the stage. The control device controls a supply and a stop of the supply of each of the first and the second high frequency powers at every preset cycle. The first and the second high frequency powers are supplied exclusively. A ratio of a supply time with respect to a single cycle of the first high frequency power is lower than that of the second high frequency power. |
| priorityDate |
2019-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |