| abstract |
A die stack structure includes a first die, a dielectric material layer, a first bonding dielectric layer and a second die. The first die has an active surface and a rear surface opposite to the active surface. The first die includes a through-substrate via (TSV) therein. The TSV protrudes from the rear surface of the first die. The dielectric material layer surrounds and wraps around the first die. The first bonding dielectric layer is disposed on a top surface of the dielectric material layer and the rear surface of the first die and covers the TSV, wherein the TSV penetrates through the first bonding dielectric layer. The second die is disposed on the first die and has an active surface and a rear surface opposite to the active surface. The second die has a second bonding dielectric layer and a conductive feature disposed in the second bonding dielectric layer. The first bonding dielectric layer separates the second bonding dielectric layer from the dielectric material layer, and the first die and the second die are bonded through bonding the second bonding dielectric layer with the first bonding dielectric layer and bonding the conductive feature with the TSV. |