| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-1063 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5226
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-528
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76816
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53223
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53266
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76807
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76811
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76814
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76844 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-528
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 |
| filingDate |
2018-11-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e39eff96fe89e45ed3b25730b1bccf43
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0a1180e962082cd14923da6e8f100824
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_acec069c47db153e089e15aaba0a9322
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ee80ea4c95c103bbcd9b7bd7a57ec247 |
| publicationDate |
2020-05-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2020144107-A1 |
| titleOfInvention |
Method of forming barrier free contact for metal interconnects |
| abstract |
A method includes forming a first insulating layer having one or more vias formed in at least a portion of the first insulating layer. The vias are filled with a first metallic material. A cap layer is deposited on a top surface of the first insulating layer and a top surface of the one or more vias and a second insulating layer is deposited on a top surface of the cap layer. One or more openings are formed in the second insulating layer and the cap layer. A self-assembled monolayer is formed on an exposed top surface of the first metallic material in the one or more vias. A barrier layer is formed on at least the exposed surface of the one or more openings. The self-assembled monolayer is removed and the one or more openings are filled with a second metallic material. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11062943-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022108917-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11764157-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102021100639-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11784127-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022238466-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2023126055-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2023132200-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2023115211-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022020679-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11456211-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022037202-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022028795-A1 |
| priorityDate |
2018-11-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |