| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67109 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67207
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32174
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05H1-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67253
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32137
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2633
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3053
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-263
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67 |
| filingDate |
2019-09-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0bba7613c31bf8577906596a1105d313
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ec0c7639355d2fe1a5a21a9b76c97373
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1ebdfbf7429253fcf1ed46261652387c |
| publicationDate |
2020-04-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2020126801-A1 |
| titleOfInvention |
Etching method and plasma processing apparatus |
| abstract |
A method of etching a silicon-containing film includes providing a workpiece in a chamber body of a plasma processing apparatus. The workpiece has a silicon-containing film and a mask. The mask is provided on the silicon-containing film. An opening is formed in the mask. The etching method further includes etching a silicon-containing film. In the etching, plasma of a processing gas containing carbon and iodine heptafluoride is generated in the chamber body to etch the silicon-containing film. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021289612-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3989682-A4 |
| priorityDate |
2018-10-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |