| abstract |
A method to form a 3D semiconductor device, the method including: providing a first wafer including first circuits including transistors and interconnection; preparing a second wafer including a silicon layer; performing growth of an epitaxial layer on top of the silicon layer, the epitaxial layer including non-silicon atoms, forming second circuits over the second wafer, the second circuits including transistors and interconnection; transferring and then bonding the second wafer on top of the first wafer; and then thinning the second wafer to a thickness of less than ten microns. |