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filingDate 2019-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6bc5c5f45af232f10ee777d2fdc7d16d
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publicationDate 2020-03-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2020075425-A1
titleOfInvention Vertical field effect transistors
abstract Vertical field effect transistors (FETs) with minimum pitch and methods of manufacture are disclosed. The structure includes at least one vertical fin structure and gate material contacting with the at least one vertical fin structure. The structure further includes metal material in electrical contact with the ends of the at least one vertical fin.
priorityDate 2014-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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