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filingDate 2019-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2019-10-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2019305788-A1
titleOfInvention Semiconductor laser, atomic oscillator, and frequency signal generation system
abstract A semiconductor laser includes a first mirror layer, a second mirror layer, an active layer disposed between the first mirror layer and the second mirror layer, a semiconductor layer disposed in the second mirror layer, an insulation region configured to insulate the second mirror layer and the semiconductor layer from each other, a first electrode connected to the first mirror layer, a second electrode connected to the second mirror layer, and a third electrode connected to the semiconductor layer.
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type http://data.epo.org/linked-data/def/patent/Publication

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