Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9efeee5993a3a496a4fe9496c4bd88ac http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a1e0d6f7b1e2776f1114ae087cf48694 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S2301-176 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-18394 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-18347 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-18313 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-183 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-323 |
filingDate |
2011-02-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_855f930a41f7ea4e9255f4a01b623d95 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9bdfe73cc163153f656129c3ff07391a |
publicationDate |
2012-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2012163407-A1 |
titleOfInvention |
Vertical-Cavity Surface-Emitting Laser Device Having Relief Structure |
abstract |
The present disclosure is a vertical-cavity surface-emitting laser (VCSEL) device. A relief structure is formed above or below a light emitting region by partially removing an aluminum composition layer of VCESL through an etching process. Thus, profound static performances are obtained, including low power consumption, biggest operational speed, and high ratio of data transmission to power consumption as 2.9 and 9.2 Gbps/mW under 34 and 12.5 Gbps, respectively. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9735879-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019305788-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I617050-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9847447-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016064599-A1 |
priorityDate |
2010-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |