| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b9daca98ac07d1c93234d13f7306addb |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07F7-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07F7-025
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07F7-21 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02219
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-345
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02222
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45553
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K8-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45536
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07F7-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02208
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455 |
| filingDate |
2017-07-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cd27a5e6e6cfcc3b2aab38ef0cf65f8a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_53eafbaf1d6df8671cfdf9bb10f8189d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c4ce2f4a0d06db8ab2307696498fa569
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a35ca2cf922854b76435ad82611172e6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f04d64696149e245a90bb8de5f890721
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3b7f130b31e924829717fbe85f8eab3d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_975787f67a8afca8eff961c565b80ced
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6e138bb85f887329b1887ffac3732624
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_80d0b6ef81e7787803ea8bd607913901
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2348ec29240d3594496cbd70d3098a1a |
| publicationDate |
2019-08-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2019249296-A1 |
| titleOfInvention |
Method for manufacturing silicon nitride thin film using plasma atomic layer deposition |
| abstract |
The present invention relates to a method for manufacturing a high-purity silicon nitride thin film using plasma atomic layer deposition. More specifically, the present invention can realize improved thin film efficiency and a step coverage by performing a two-stage plasma excitation step and can provide a high-purity silicon nitride thin film with an improved deposition rate despite a low film-forming temperature. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11390635-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3844318-A4 |
| priorityDate |
2016-07-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |