| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 |
| filingDate |
2017-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b5d531efc33a692f7f0e75872c3f70f7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_251dc58615afabc45ec2de8015f19999 |
| publicationDate |
2019-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2019198337-A1 |
| titleOfInvention |
Semiconductor device and semiconductor device manufacturing method |
| abstract |
The present invention aims to improve the accuracy and stability when removing an insulating film at a bottom of a TSV to allow a through hole to open toward a connection target electrode. A semiconductor device manufacturing method including: forming a through hole in a semiconductor substrate by using anisotropic etching performed from a first surface side of the semiconductor substrate; forming a thin film being an insulating film on an entire inner surface of the through hole; forming a carbon-containing thin film using plasma deposition on the first surface including an opening edge portion of the through hole; engraving an inner bottom of the through hole by using anisotropic plasma etching with the carbon-containing thin film as a mask; removing the carbon-containing thin film by ashing; and forming a through-substrate electrode in the through hole. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11164775-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019164774-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11120998-B2 |
| priorityDate |
2016-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |