http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018350743-A1

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filingDate 2018-08-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_02d36a2e97ab40a016d07a3f8d1c7893
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publicationDate 2018-12-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2018350743-A1
titleOfInvention Standard-cell layout structure with horn power and smart metal cut
abstract The present disclosure, in some embodiments, relates to a method of forming an integrated circuit. The method is performed by forming a gate structure over a substrate, and selectively implanting the substrate according to the gate structure to form first and second source/drain regions on opposing sides of the gate structure. A first MEOL structure is formed on the first source/drain region and a second MEOL structure is formed on the second source/drain region. The first MEOL structure has a bottommost surface that extends in a first direction from directly over the first source/drain region to laterally past an outermost edge of the first source/drain region. A conductive structure is formed to contact the first MEOL structure and the second MEOL structure. The conductive structure laterally extends from directly over the first MEOL structure to directly over the second MEOL structure along a second direction perpendicular to the first direction.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11018157-B2
priorityDate 2015-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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