| abstract |
A method of forming a transistor in an integrated circuit device can include forming a first and second nanosheet structure with alternating sheets of silicon and silicon germanium. A first and second transistor structure are constructed using the first and second nanosheet structures as first and second channels. The sheets of silicon germanium are removed from the first and second nanosheet structures. A mask is placed over the first transistor structure, leaving the second transistor structure exposed. The second channel is thinned while the first transistor is protected by the mask. Thereafter, semiconductor processing continues, with the first transistor having a thicker channel than the second transistor. |