abstract |
The invention relates to depositing a layer on a substrate in a reactor, by:n introducing a first precursor comprising a silicon halide in the reactor; introducing a second precursor in the reactor; providing an energy source to create a plasma from the second precursor so that the second precursor reacts with the first precursor until a primary layer comprising silicon and second precursor of a desired thickness is formed; stop introducing the second precursor; and, subsequently introducing the silicon halide in the reactor at a temperature causing decomposition of the silicon halide precursor to provide a substantially pure amorphous silicon layer on top of the primary layer. |