Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
classificationCPCAdditional |
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classificationCPCInventive |
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classificationIPCAdditional |
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classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
filingDate |
2016-05-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4d1313d8bfcce1d3c9f574e3ee09fe93 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_826b4a7de7875602d334b86fca131fc2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9109b68b55594387713c374f294c46cb http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_888bf566a40c41db8955127fd1def57c |
publicationDate |
2017-11-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2017323967-A1 |
titleOfInvention |
Precise control of vertical transistor gate length |
abstract |
Transistor and methods of forming the same include forming a channel fin on a bottom source/drain region. A dielectric fill is formed around the channel fin with a gap in an area directly above the channel fin that has a width greater than a width of the channel fin. Spacers are formed in the gap. The dielectric fill is etched away. A gate stack is formed on sidewalls of the channel fin directly underneath the spacers. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10249731-B1 |
priorityDate |
2016-05-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |