http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017301572-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05B6-6491 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67115 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05B6-80 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05B6-6482 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05B6-806 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05B6-80 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324 |
| filingDate | 2017-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_91dae2061d8cdace1a660a24f38729e9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6cb4c55c6cc2d66163029d9b97180f50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_26c7430865a6bab90b34b20a1839c1de |
| publicationDate | 2017-10-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-2017301572-A1 |
| titleOfInvention | Systems and Methods for Annealing Semiconductor Structures |
| abstract | Systems and methods are provided for annealing a semiconductor structure. In one embodiment, the method includes providing an energy-converting structure proximate a semiconductor structure, the energy-converting structure comprising a material having a loss tangent larger than that of the semiconductor structure; providing a heat reflecting structure between the semiconductor structure and the energy-converting structure; and providing microwave radiation to the energy-converting structure and the semiconductor structure. The semiconductor structure may include at least one material selected from the group consisting of boron-doped silicon germanium, silicon phosphide, titanium, nickel, silicon nitride, silicon dioxide, silicon carbide, n-type doped silicon, and aluminum capped silicon carbide. The heat reflecting structure may include a material substantially transparent to microwave radiation and having substantial reflectivity with respect to infrared radiation. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10847389-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2020286757-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10453716-B2 |
| priorityDate | 2013-10-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 49.