http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017294536-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7803 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0629 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0733 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66666 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-60 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823487 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7827 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-07 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 |
| filingDate | 2017-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6bc5c5f45af232f10ee777d2fdc7d16d |
| publicationDate | 2017-10-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-2017294536-A1 |
| titleOfInvention | Vertical fets with high density capacitor |
| abstract | A technique relates to semiconductors. A bottom terminal of a transistor and bottom plate of a capacitor are positioned on the substrate. A spacer is arranged on the bottom terminal of the transistor. A transistor channel region extends vertically from the bottom terminal through the spacer to contact a top terminal of the transistor. A capacitor channel region extends vertically from the bottom plate to contact a top plate of the capacitor. A first gate stack is arranged along sidewalls of the transistor channel region and is in contact with the spacer. A second gate stack is arranged along sidewalls of the capacitor channel region and is disposed on the bottom plate. A distance from a bottom of the first gate stack to a top of the bottom terminal is greater than a distance from a bottom of the second gate stack to a top of the bottom plate. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2019132881-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11133410-B2 |
| priorityDate | 2016-04-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 100.