| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-485
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B61-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53295 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5226
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-528
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76804
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76816 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-528
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 |
| filingDate |
2016-01-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c0a22cc83309c84b0f1780fdd7bdf2ce
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_49ea9a43a2db7ba7662ef69de89fb7af
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5d8342b5f4b029f07685c95a7821d6e7 |
| publicationDate |
2017-07-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2017213790-A1 |
| titleOfInvention |
Semiconductor device structure and method for forming the same |
| abstract |
A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate. The semiconductor device structure includes a first conductive plug and a second conductive plug over the semiconductor substrate and adjacent to each other. The semiconductor device structure includes a first conductive via structure and a second conductive via structure over the semiconductor substrate and adjacent to each other. A first distance between the first conductive plug and the second conductive plug is less than a second distance between the first conductive via structure and the second conductive via structure. A first height of the first conductive plug is greater than a second height of the first conductive via structure. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10840249-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10916582-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11508665-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111129064-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111129064-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11127788-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021398905-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11101175-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10403500-B2 |
| priorityDate |
2016-01-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |