| abstract |
Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I: n n n n n n n n n n wherein R 1 is selected from linear or branched C 3 to C 10 alkyl group, linear or branched C 3 to C 10 alkenyl group, linear or branched C 3 to C 10 alkynyl group, C 1 to C 6 dialkylamino group, electron withdrawing group, and C 6 to C 10 aryl group; R 2 is selected from hydrogen, linear or branched C 1 to C 10 alkyl group, linear or branched C 3 to C 6 alkenyl group, linear or branched C 3 to C 6 alkynyl group, C 1 to C 6 dialkylamino group, C 6 to C 10 aryl group, linear or branched C 1 to C 6 fluorinated alkyl group, electron withdrawing group, and C 4 to C 10 aryl group; optionally wherein R 1 and R 2 are linked together to form ring selected from substituted or unsubstituted aromatic ring or substituted or unsubstituted aliphatic ring; and n=1 or 2. |