| abstract |
Well-controlled, conformal doping of semiconductor substrates may be achieved by low temperature hydrogen-containing plasma treatment prior to gas phase doping. Substrates doped in this manner may be capped and annealed for thermal drive-in of the dopant. The technique is particularly applicable to the formation of ultrashallow junctions (USJs) in three-dimensional ( 3 D) semiconductor structures, such as FinFET and Gate-All-Around (GAA) devices. |