| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6af9a57049d2d91c036d4f5ab49154cb |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-485 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-743
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0335
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0338
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0276
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0332
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823871
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76816 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-033
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 |
| filingDate |
2015-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1af66f78596011e9a336612ae2ea645c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ac5d27aa8655baaac5b66451c617d377
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_761cafd18d64e888d51a03994caa896f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7f47c1df16285a2ccb92b060cb008052
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_004da19926209f2d9729124155edad33
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_620adcb10af8dd939134440a8a0a5da1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_43b4ded0ded05b9e51474483b8f436da |
| publicationDate |
2017-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2017170016-A1 |
| titleOfInvention |
Multiple patterning method for substrate |
| abstract |
Methods for multiple patterning a substrate may include: forming a hard mask including a carbonaceous layer and an oxynitride layer over the carbonaceous layer on a substrate; and forming a first pattern into the oxynitride layer and partially into the carbonaceous layer using a first soft mask positioned over the hard mask. A wet etching removes a portion of the first soft mask from the first pattern in the oxynitride layer without damaging the carbonaceous layer. Subsequently, a second pattern and a third pattern are formed into the hard mask, creating a multiple pattern in the hard mask. The multiple pattern may be etched into the substrate, followed by removing any remaining portion of the hard mask. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10643926-B2 |
| priorityDate |
2015-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |