| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_242cc8d15c771395b920cc7de452da6a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-05432
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01012
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01013 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-4807
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C4-129
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C4-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C4-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32495
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C4-134
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C4-129
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C4-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32 |
| filingDate |
2016-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8f094cc9b8191e358d30e992b465b84c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_89433e09d3ed07165f113fd46fb415b6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cb223d37c19c04216902f61f88f397f9 |
| publicationDate |
2017-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2017117120-A1 |
| titleOfInvention |
MgO-BASED CERAMIC FILM, MEMBER FOR SEMICONDUCTOR MANUFACTURING APPARATUS, AND METHOD FOR FORMING MgO-BASED CERAMIC FILM |
| abstract |
A MgO-based ceramic film according to the present invention contains crystalline phases of MgO and MgAl 2 O 4 , and Al is dissolved in the MgO to form a solid-solution. The ceramic film exhibits a diffraction peak representing the (200) plane of MgO at an angle 2 θ of more than 42.92° in CuKα XRD measurement. A shoulder preferably appears on the higher angle side of the peak representing the (200) plane of MgO. The mass ratio MgO/Al 2 O 3 of MgO to Al 2 O 3 converted from Mg and Al in terms of oxides is preferably higher than 2.33. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11230502-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I709546-B |
| priorityDate |
2014-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |