http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017036905-A1

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filingDate 2016-10-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cc56df80cc5fcff00c6c1b647e9c6356
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publicationDate 2017-02-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2017036905-A1
titleOfInvention Mems structure with an etch stop layer buried within inter-dielectric layer
abstract A MEMS structure includes a substrate, an inter-dielectric layer on a front side of the substrate, a MEMS component on the inter-dielectric layer, and a chamber disposed within the inter-dielectric layer and through the substrate. The chamber has an opening at a backside of the substrate. An etch stop layer is disposed within the inter-dielectric layer. The chamber has a ceiling opposite to the opening and a sidewall joining the ceiling. The sidewall includes a portion of the etch stop layer.
priorityDate 2013-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 34.