| abstract |
A semiconductor device includes a semiconductor substrate, a device layer located at an upper surface of the semiconductor substrate, an insulating layer located on the device layer, and a through electrode. The through electrode includes a body located in a through hole provided in the insulating layer and a head located on the body and the insulating layer and is electrically connected to an upper-layer wiring in the device layer. A perimeter of the head on a lower surface side thereof is smaller than a perimeter of the head on an upper surface side thereof. |