| abstract |
A light-emitting diode having a multilayer bonding pad includes: a P1 layer disposed under a light-emitting structure and configured to improve ohmic contact and adhesion; a P3 layer disposed under the P1 layer and configured to prevent diffusion; a Sn-based metal layer disposed under the P1 layer and configured to enhance soldering weldability and prevent oxidation; a Cu-based P5 layer disposed on the Sn-based metal layer and configured to prevent the diffusion of Sn; and a P4 layer disposed between the P3 layer and the P5 layer and configured to suppress the reaction between the P5 layer and other layers. |