| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5227534d5452763715e3b63f856057cf |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-18388
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-02257 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-167
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G06F3-0317
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-184
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0264
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-183
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-187
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1105 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-187
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-183
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-167
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-026 |
| filingDate |
2016-01-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_57252381169d553a7fe198849bc393f2 |
| publicationDate |
2016-05-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2016134084-A1 |
| titleOfInvention |
Semiconductor laser with integrated phototransistor |
| abstract |
The present invention relates to a semiconductor laser for use in an optical module for measuring distances and/or movements, using the self-mixing effect. The semiconductor laser comprises a layer structure including an active region ( 3 ) embedded between two layer sequences ( 1, 2 ) and further comprises a photodetector arranged to measure an intensity of an optical field resonating in said laser. The photodetector is a phototransistor composed of an emitter layer (e), a collector layer (c) and a base layer (b), each of which being a bulk layer and forming part of one of said layer sequences ( 1, 2 ). With the proposed semiconductor laser an optical module based on this laser can be manufactured more easily, at lower costs and in a smaller size than known modules. |
| priorityDate |
2007-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |