| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f30515a517d70e97f85723382eba6d1e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_59d8daefc78360cc438a88a86068a7f9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_763b73fd590e7a0093481f123a01005a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_164f172baf86cb37c20226dc2fbf2c97
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_adae6df0074f6d5b1ce0fe20323dc825
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_aeb35342ea49014b33918d61529afc31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_284b5c81ea1b99da5346b0b9b7c18838 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02214
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-482
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02329
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02123
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02219
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| filingDate |
2015-10-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_abf7ea6d7c57fd983651167962972449
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1af876469f1d0d579bc31cb52d214246
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6d33555c563d341fa880893d9d14efd9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d98c3f1d54116c5d64616100ca6b0571
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c896fe833ad49043c695f817b4604b19
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f239c1dc40850769f2e92aa4f4fdd27b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b8254beec04732216bd8a631e47ff6ae |
| publicationDate |
2016-04-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2016118247-A1 |
| titleOfInvention |
Method of forming semiconductor device |
| abstract |
Provided is a method of forming a semiconductor device. The method can include loading a semiconductor substrate into semiconductor equipment. A base layer can be formed on the loaded semiconductor substrate by performing a base deposition process using a base source material. A first silicon layer can be formed on the base layer to a greater thickness than the base layer by performing a first silicon deposition process using a silicon source material different from the base source material. A first nitrided silicon layer can be formed by nitriding the first silicon layer using a first nitridation process. The semiconductor substrate having the first nitrided silicon layer can be unloaded from the semiconductor equipment. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-4012758-A4
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022254898-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11631747-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I798800-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019221570-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10777559-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111627910-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10770464-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022254899-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11489060-B2 |
| priorityDate |
2014-10-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |