| abstract |
A method of manufacturing a silicon nitride (Si 3 N 4 ) film at low temperature using an atomic layer deposition (ALD), and an ALD apparatus for the same are disclosed. The method of manufacturing a Si 3 N 4 film uses a silicon precursor material including silicon as a source gas, an N 2 gas activated by plasma as a reaction gas, and an N 2 gas as a purge gas, and manufactures a Si 3 N 4 film by providing gases in an order of the source gas, the purge gas, the reaction gas, and the purge gas. |