| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ed62b7551998e54b35784cdbbb2778d5 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32051
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28506
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45527
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45534
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28562
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67011 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-52 |
| filingDate |
2015-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a0b5c5d6420b5b689d2809e74c142e12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_929e876d3323bbc19bd50b8c58a31c6f |
| publicationDate |
2016-03-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2016079070-A1 |
| titleOfInvention |
Method of manufacturing semiconductor device and substrate processing apparatus |
| abstract |
A method of manufacturing a semiconductor device includes forming a film on a substrate by performing a predetermined number times a cycle including: supplying a first process gas to the substrate; and supplying a second process gas to the substrate, wherein the act of supplying the first process gas and the supplying the second process gas are performed in a state where the substrate is maintained at a predetermined temperature of room temperature or more and 450 degrees C. or less; and a third process gas, which reacts with byproducts produced by a reaction of the first process gas and the second process gas, is supplied to the substrate simultaneously with at least one of the act of supplying the first process gas or the act of supplying the second process gas. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2021068916-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10734218-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20200047295-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015064908-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111066124-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I737007-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2017168600-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11587791-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7166367-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102272121-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2020074367-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11538688-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9984887-B2 |
| priorityDate |
2014-09-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |