| abstract |
A semiconductor device capable of reducing an inter-source electrode resistance RSS(on) and reducing a chip size is provided. A semiconductor device according to the present invention includes a chip partitioned into three areas including a first area, a second area, and a third area, and a common drain electrode provided on a back surface of the chip, in which the second area is formed between the first and third areas, a first MOSFET is formed in the first area and the third area, and a second MOSFET is formed in the second area. |