| abstract |
A method of performing a radical-enhanced atomic-layer deposition process on a surface of a substrate that resides within an interior of a reactor chamber is disclosed. The method includes forming plasma from a gas mixture consisting of CF 4 and O 2 , wherein the CF 4 is present in a concentration in the range from 0.1 vol % to 10 vol %. The plasma formed from the gas mixture generates oxygen radicals O* faster than if there were no CF 4 present in the gas mixture. The method also includes feeding the oxygen radicals and a precursor gas sequentially into the interior of the reactor chamber to form an oxide film on the surface of the substrate. A system for performing the radical-enhanced atomic-layer deposition process using the rapidly formed oxygen radicals is also disclosed. |