| abstract |
Methods and apparatus for fabricating a porous, low-k dielectric film are described. In some implementations, the methods include exposing a precursor film including a porogen within a matrix to a plasma generated from a weak oxidizer. The plasma may also include reducing agent species. In some implementations, the plasma is a downstream plasma. Implementations of the method involve selectively removing regions of isolated, organic porogen co-existing within a silicon-organic matrix by exposure to the plasma while preserving the organic groups bonded to the backbone of the silicon matrix. The methods also result in low damage to the dielectric film. In some implementations, plasma exposure is followed by exposure to ultraviolet (UV) radiation. |