Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3086 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3083 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3081 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3081 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3086 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0214 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31122 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02186 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
filingDate |
2014-07-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_542740195afbbb99d58e6d75bfaa0ca7 |
publicationDate |
2015-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2015380256-A1 |
titleOfInvention |
Mechanisms for Forming Patterns Using Multiple Lithography Processes |
abstract |
The present disclosure provides a method for forming patterns in a semiconductor device. In accordance with some embodiments, the method includes providing a substrate and a patterning-target layer formed over the substrate; forming a first cut pattern in a first hard mask layer formed over the patterning-target layer; forming a second cut pattern in a second hard mask layer formed over the patterning layer, the first hard mask layer having a different etching selectivity from the second hard mask layer; selectively removing a portion of the second cut pattern in the second hard mask layer and a portion of the patterning-target layer within a first trench; and selectively removing a portion of the first cut pattern in the first hard mask layer and a portion of the patterning-target layer within a second trench. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11145519-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10276363-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9412655-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9711369-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10770303-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10163652-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110718451-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9761436-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9875906-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10153166-B2 |
priorityDate |
2014-03-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |