Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32091 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76846 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02068 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76807 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53266 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53295 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5226 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-528 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-528 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
filingDate |
2014-05-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ef8cf4cd33d98fa4ec1254657b946c03 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d04be56a9d142d17374c31321a508079 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3dde0112a885e960a22e6c3d10dc8b59 |
publicationDate |
2015-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2015348902-A1 |
titleOfInvention |
Protective via cap for improved interconnect performance |
abstract |
Exemplary methods of forming a semiconductor structure may include etching a via through a semiconductor structure to expose a first circuit layer interconnect metal. The methods may include forming a layer of a material overlying the exposed first circuit layer interconnect metal. The methods may also include forming a barrier layer within the via having minimal coverage along the bottom of the via. The methods may additionally include forming a second circuit layer interconnect metal overlying the layer of material. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10770314-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018350634-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11756828-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102112116-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20180131332-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2020106386-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10858727-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I685044-B |
priorityDate |
2014-05-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |