http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015275017-A1
Outgoing Links
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_dd7c27b9ec61781656e6f039702fd568 |
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08K3-28 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1292 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B05D3-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02628 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D11-03 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08K5-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08K3-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02554 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02565 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D11-52 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08K5-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08K3-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09D11-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 |
filingDate | 2015-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a0be1a9187ed8bedb7f4498f5a72aed7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1c8de181582a31325acd7eb9ee46b6a3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_816036e8932cce72ad3124ac2d390de9 |
publicationDate | 2015-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | US-2015275017-A1 |
titleOfInvention | Indium-zinc-oxide semiconductor ink composition in which a spontaneous combustion reaction occurs, and inorganic semiconductor thin film produced thereby |
abstract | The aim of the present invention is to provide an indium-zinc-oxide semiconductor ink composition in which a spontaneous combustion reaction occurs, and provide an inorganic semiconductor thin film produced thereby. To this end, the present invention provides a semiconductor ink composition which comprises a complex, represented by formula 1, incorporating a nitrate of a metal A which is an oxidising material and incorporating a metal B which is a fuel material; wherein the metal A and the metal B are each respectively a metal selected from the group consisting of indium, gallium, zinc, titanium, aluminum, lithium, and zirconium, and metal A and metal B are different from each other. According to the present invention, the indium-zinc oxide semiconductor ink composition in which a spontaneous combustion reaction occurs, and the inorganic semiconductor thin film produced thereby, can be used as the channel material of a transistor element, and consequently can produce inorganic thin film transistors having improved electrical performance. Also, the present invention is suitable for solution processing and so is easy to produce as a thin film and capable of low temperature processing, and can produce thin films which are dense and uniform due to a spontaneous combustion reaction that occurs on mixing two metal precursors coordinated with a fuel material and an oxidising material. |
priorityDate | 2012-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 107.