| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30625
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0338
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02046
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02052
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02054
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0332
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3081
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3086
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0335 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate |
2014-03-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_915225c0889e64a81f1a613cc4171585
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c07d9947b60ca642c4ad6539eb479331
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d0ca35b95a29f546e8b48ac8bb813542
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_542740195afbbb99d58e6d75bfaa0ca7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9454cca25d0b04a98d1791c86b60d5b8 |
| publicationDate |
2015-09-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2015262830-A1 |
| titleOfInvention |
Mechanisms for forming patterns using multiple lithography processes |
| abstract |
The present disclosure provides a method for forming patterns in a semiconductor device. In accordance with some embodiments, the method includes providing a substrate, a patterning-target layer over the substrate, and a hard mask layer over the patterning-target layer; forming a first pattern in the hard mask layer; removing a trim portion from the first pattern in the hard mask layer to form a trimmed first pattern; forming a first resist layer over the hard mask layer; forming a main pattern in the first resist layer; and etching the patterning-target layer using the main pattern and the trimmed first pattern as etching mask elements to form a final pattern in the patterning-target layer. In some embodiments, the final pattern includes the main pattern subtracting a first overlapping portion between the main pattern and the trimmed first pattern. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9711369-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11145519-B2 |
| priorityDate |
2014-03-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |