| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2642 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2644
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C29-56008
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C29-006
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C29-48
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-0425
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2601 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 |
| filingDate |
2015-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_acdec9a6ff15e6084ec6d9ac2ee81a04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_45ba8f85ac2a8d5d47755b8d281f1a19
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ccf393868cbba1a615a4f03c81421ca1 |
| publicationDate |
2015-09-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2015260783-A1 |
| titleOfInvention |
Split gate structure and method of using same |
| abstract |
A method comprises providing first and second semiconductor devices. Each device comprises a transistor having a split gate electrode including first and second gate portions. Each device has a respective ratio between an area of its first gate portion and a sum of areas of its first and second gate portions. For each device, a stress voltage is applied to the first gate portion, but not to the second gate portion. For each device, the first and second gate portions are biased with a common voltage, and data are collected indicating a respective degradation for each device due to the stress voltage. The degradation has a component due to time dependent dielectric breakdown (TDDB) and a component due to bias temperature instability. From the collected data extrapolation determines the degradation component due to TDDB. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10629526-B1 |
| priorityDate |
2011-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |