| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ed62b7551998e54b35784cdbbb2778d5 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02189
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02183
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02186
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02178
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02181 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0214
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45531
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45546
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate |
2015-05-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c745cc5d8b5cba025d944e864981d9f4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3cd060bc4a3d9ce9aba67e94c46a132b |
| publicationDate |
2015-08-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2015235843-A1 |
| titleOfInvention |
Method of Manufacturing Semiconductor Device and Substrate Processing Method |
| abstract |
A method of manufacturing a semiconductor device is provided. The method includes: forming a film containing a predetermined element, oxygen, carbon and nitrogen on a substrate by repeating a cycle. The cycle includes: (a) supplying a source gas containing the predetermined element and a halogen element to the substrate; (b) supplying a first reactive gas containing three elements including carbon, nitrogen and hydrogen to the substrate; (c) supplying a nitriding gas as a second reactive gas to the substrate; (d) supplying an oxidizing gas as a third reactive gas to the substrate; and (e) supplying an hydrogen-containing gas as a fourth reactive gas to the substrate, wherein (a) through (e) are non-simultanelously performed. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10910217-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014306344-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11322347-B2 |
| priorityDate |
2011-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |