| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67109
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2855
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28556
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-68792
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-68742 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32724
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31058
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3405
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67184
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3426
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76814
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-046
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76826
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67207
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-321
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-165
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76879 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2014-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_35461eb44b3375a5381d66b661334d04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_31f2b9e344133a5e3c2f454865caa72e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d1216cd9e0b6675edb9350f77f7921df |
| publicationDate |
2015-06-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2015170963-A1 |
| titleOfInvention |
Semiconductor device manufacturing method |
| abstract |
A semiconductor device manufacturing method includes: performing nitrogen plasma processing on an interlayer insulating film made of a fluorine containing carbon film having a recess formed in a surface thereof in a predetermined pattern; forming a Ru film directly on the fluorine containing carbon film subjected to the nitrogen plasma processing. The semiconductor device manufacturing method further includes filling a Cu film in the recess to form a Cu wiring. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017194229-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9917027-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I762994-B |
| priorityDate |
2013-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |