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filingDate 2014-12-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2015-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2015162203-A1
titleOfInvention Method for etching silicon layer and plasma processing apparatus
abstract Disclosed is a method of etching a silicon layer by removing an oxide film formed on a workpiece which includes the silicon layer and a mask provided on the silicon layer. The method includes: (a) forming a denatured region by generating plasma of a first processing gas containing hydrogen, nitrogen, and fluorine within a processing container accommodating the workpiece therein to denature an oxide film formed on a surface of the workpiece; (b1) removing the denatured region by generating plasma of a rare gas within the processing container; and (c) etching the silicon layer by generating plasma of a second processing gas within the processing container.
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Total number of triples: 43.