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filingDate 2013-11-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2015-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2015140836-A1
titleOfInvention Methods to Control SiO2 Etching During Fluorine Doping of Si/SiO2 Interface
abstract Methods and apparatus for processing using a remote plasma source are disclosed. The apparatus includes an outer chamber enclosing a substrate support, a remote plasma source, and a showerhead. A substrate heater can be mounted in the substrate support. A transport system moves the substrate support and is capable of positioning the substrate. Methods are disclosed that discuss the use of blocking species that bind to the surface of the dielectric and retard the etching of the dielectric surface by a doping/passivating species. The surface of the dielectric may be exposed to the blocking species a plurality of times during the process to ensure that the surface is well protected.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2018511700-A
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