patent/US-2015126005-A1

http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015126005-A1

Outgoing Links

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filingDate	2014-11-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor	http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_47752151d9f0d4c324e78c2d21c92f9a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_97be1652e50ce4d19c29c5a918940a22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eaba155d2245934bf2538164a75b9a1e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_da2406e82495acc3d5940fffb00c9b74 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ceaf5a0fdf95a0d6ea614cc1f26e3673 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_96c3903b66f577257e419e3a6fab5915 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0f7e27c5ee11e1bdff06bc7584531e2f
publicationDate	2015-05-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber	US-2015126005-A1
titleOfInvention	Photoresist composition and method of manufacturing thin film transistor substrate using the same
abstract	A photoresist composition may include a novolac resin, a diazide-based photosensitive compound, a surfactant represented by Chemical Formula 1 below, and a solvent. n n n n n n n n n n R1 and R2 may denote a hydrogen atom or an alkyl group, x may be 10-50, and y may be 10-50.
isCitedBy	http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10748810-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11557508-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I804532-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019371653-A1
priorityDate	2013-11-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type	http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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isDiscussedBy	http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID327368223

Total number of triples: 48.