| abstract |
An aqueous removal composition having a pH in the range of from 2 to 14 and method for selectively removing an etching mask consisting essentially of TiN, TaN, TiNxOy, TiW, W, or alloy of Ti or W relative to low-k materials from a semiconductor substrate comprising said low-k materials having a TiN, TaN, TiNxOy, TiW, W, or alloy of Ti or W etching mask thereon wherein the removal composition comprises at least one oxidizing agent and a carboxylate compound. |