| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42392 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02579
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45551
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4554
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-511
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02576
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2236 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-223
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate |
2013-04-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dfd0948dce48f0cddd9b71bae10cb02a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_551d4bd20886662192fc28125b340d28 |
| publicationDate |
2015-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2015087140-A1 |
| titleOfInvention |
Film forming method, film forming device, and film forming system |
| abstract |
A film forming method according to an embodiment includes: (a) a step of supplying a first precursor gas of a semiconductor material into a processing vessel in which a processing target substrate is disposed, the first precursor gas being adsorbed onto the processing target substrate during the step; (b) a step of supplying a second precursor gas of a dopant material into the processing vessel, the second precursor gas being adsorbed onto the processing target substrate during the step; and (c) a step of generating the plasma of a reaction gas in the processing vessel, a plasma treatment being performed during the step so as to modify a layer adsorbed onto the processing target substrate. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9847228-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10861667-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11462630-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11230763-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110416071-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018182627-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111095481-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016002784-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10734221-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9929015-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11031247-B2 |
| priorityDate |
2012-04-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |