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publicationDate 2015-01-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2015014752-A1
titleOfInvention Thin body fet nanopore sensor for sensing and screening biomolecules
abstract A thin body field effect transistor (FET) nanopore sensor includes a silicon on insulator (SOI) structure having an annular shape and comprising a source, a drain and a thin body channel interposed therebetween. A nanopore is formed in a central opening of the SOI structure. A gate dielectric is disposed on the SOI structure insulating the SOI structure from a liquid gate within the nanopore. A back gate is formed around the SOI structure. A shallow trench isolation (STI) layer is formed between the SOI structure and the back gate.
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