Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2baf849d216e689ecc40ccc931a7a7bc |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-80 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3081 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-80 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0752 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0755 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D183-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-11 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
filingDate |
2013-01-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c29c6f143f3656c8d7985d809448bc1a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c6dedb2bfd6b34c51908678e6ad554b2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1b017ab90ebb5e3f9c0d200a1fb4322f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1d59fc16c05232a51ae619b9c701f003 |
publicationDate |
2014-12-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2014377957-A1 |
titleOfInvention |
Method for manufacturing semiconductor device using silicon-containing resist underlayer film forming composition for solvent development |
abstract |
A resist underlayer film for a resist pattern formation by developing a resist with organic solvent after exposure of resist. Method for manufacturing a semiconductor includes: applying onto a substrate a resist underlayer film forming composition including hydrolyzable silanes, hydrolysis products of hydrolyzable silanes, hydrolysis-condensation products of hydrolyzable silanes, or a combination thereof. Hydrolyzable silanes being silane of Formulas (1), (2) and (3). Silane of Formulas (1), (2) and (3) in total silanes in a ratio % by mole of 45-90:6-20:0-35; baking the applied resist underlayer film forming composition to form a resist underlayer film; applying a composition to form a resist film; exposing the resist film to light; developing the resist film after exposure, with organic solvent to obtain patterned resist film; and etching the resist underlayer film by using the patterned resist film and processing the substrate using the patterned resist underlayer film; wherein n Si(R 1 ) 4 Formula (1)n n R 2 [Si(R 3 ) 3 ] Formula (2)n n R 4 [Si(R 5 ) 3 ] b Formula (3) |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017059992-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10093815-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11614686-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11561472-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018181000-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015079792-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10793680-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11361967-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9627217-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017371242-A1 |
priorityDate |
2012-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |