http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014206152-A1

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filingDate 2014-03-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2014-07-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2014206152-A1
titleOfInvention Single layer bga substrate process
abstract The present disclosure provides semiconductor packaging techniques that form a substrate using metal and insulating materials. The substrate includes a first surface that is bonded to a semiconductor device and a second surface that is bonded to a printed circuit board. The substrate is formed using several techniques that minimize the amount of mask levels used to form the substrate. For example, a metal substrate is patterned to form a three dimensional pattern on the surface. A dielectric material is deposited on the three dimensional pattern. Using several patterning and polishing embodiments described herein, the metal/dielectric substrate is patterned and polished to form a substantially flush surface that is bonded to the semiconductor device. In one embodiment, the top surface of the metal/dielectric substrate is patterned to expose the underlying metal substrate and the bottom surface of the metal substrate is polished to be substantially flush with the dielectric material.
priorityDate 2011-01-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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